This quarterly progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period include (1) completion of Hall effect measurements to determine activation energies of the gold donor and acceptor levels in silicon; (2) successful direct measurement of fast interface state density with the circular CCD test structure; and (3) demonstration of the feasibility of the use of acoustic emission as a non-destructive means for testing individual beam-lead bonds.