III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.
Explores silicon-based CMOS applications developed within the cutting-edge DARPA program
Providing an overview of systems, devices, and their component materials, this book:
Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges
Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors
Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics
Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes
Introduces novel technologies for the measurement and evaluation of material quality and device properties
Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more
Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.