Each group of elements is separated into a discussion of first the free atoms, followed by a discussion of reactive molecular forms of metal halides, oxides, and sulfides. These sections are further broken down into subsections on ""Occurrence, Properties, and Techniques"" followed by ""Chemistry"". The ""Chemistry""
sections are further divided into several headings, including abstraction, electron-transfer, oxidative addition, simple orbital mixing, substitution, disproportional and ligand transfer, and cluster formation processes.
This book will be of value to chemistry researchers, teachers, and students.
This book presents an overview of the technological advances that have occurred since the publication of the Editors earlier book High Voltage Vacuum Insulation: The Physical Basis. In this latest book, contributions from internationally recognized professionals and researchers in the field provide expanded treatment of the practical aspects of the subject. High Voltage Vacuum Insulation: Basic Concepts and Technological Practice provides a modern working manual for this specialized technology that is generic to a wide range of applications. The format makes the text suitable for use as a basis for special topic lecture courses at either the undergraduate or graduate level.Provides the fundamental physical concepts of the subjectFocuses on practical applicationsGives a historical survey of the fieldIncludes a detailed account of system design criteriaReviews theoretical models developed to explain the pinhole phenomenaPresents results of a series of experimental investigations on the subject
In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.
This volume, part of the Thin Films Series, has been wholly written by two authors instead of showcasing several edited manuscripts.
assumes only basic mathematical knowledge on the part of the reader and includes more than 100 discussion questions and some 70 problems, with solutions as well as further supplementary material available free to lecturers from the Wiley-VCH website.
The text discusses the practical aspects of building a confocal scanning optical microscope or optical interference microscope, and the applications of these microscopes to phase imaging, biological imaging, and semiconductor inspection and metrology.A comprehensive theoretical discussion of the depth and transverse resolution is given with emphasis placed on the practical results of the theoretical calculations and how these can be used to help understand the operation of these microscopes.Provides a comprehensive introduction to the field of scanning optical microscopy for scientists and engineersExplains many practical applications of scanning optical and interference microscopy in such diverse fields as biology and semiconductor metrologyDiscusses in theoretical terms the origin of the improved depth and transverse resolution of scanning optical and interference microscopes with emphasis on the practical results of the theoretical calculationsConsiders the practical aspects of building a confocal scanning or interference microscope and explores some of the design tradeoffs made for microscopes used in various applicationsDiscusses the theory and design of near-field optical microscopesExplains phase imaging in the scanning optical and interference microscopes
The overall layout of the book is similar to that of the previous two editions however, there are considerable changes in emphasis and several key additions including:
•up-to-date presentation of modern theories of liquid-vapour coexistence and criticality
•areas of considerable present and future interest such as super-cooled liquids and the glass transition
•the area of liquid metals, which has grown into a mature subject area, now presented as part of the chapter ionic liquids
•Provides cutting-edge research in the principles of liquid-state theory
•Includes frequent comparisons of theoretical predictions with experimental and simulation data
•Suitable for researchers and post-graduates in the field of condensed matter science (Physics, Chemistry, Material Science), biophysics as well as those in the oil industry
The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental data. The subjects dealt with include:
- electronic transport theory based on the test-particle and correlation-function concepts;
- scattering by phonons, impurities, surfaces, magnons, dislocations, electron-electron scattering and electron temperature;
- two-phonon scattering, spin-flip scattering, scattering in degenerate and many-band models.
CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures.
The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described.
CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.
Volume I focuses on physics and mechanics of micro- and opto-electronic structures and systems, i.e., on the science underpinnings of engineering methods and approaches used in microelectronics and photonics. Volume II deals with various practical aspects of reliability and packaging of micro- and opto-electronic systems. Internationally recognized experts and world leaders in particular areas of this branch of applied science and engineering contributed to the book.
The second edition differs substantially from the first edition, with over 30% new material, including:A new chapter on non-crystalline diffraction - designed to appeal to the large community who study the structure of liquids, glasses, and most importantly polymers and bio-molecules A new chapter on x-ray imaging - developed in close cooperation with many of the leading experts in the field Two new chapters covering non-crystalline diffraction and imaging Many important changes to various sections in the book have been made with a view to improving the exposition Four-colour representation throughout the text to clarify key concepts Extensive problems after each chapter
There is also supplementary book material for this title available online (http://booksupport.wiley.com).
Praise for the previous edition:
“The publication of Jens Als-Nielsen and Des McMorrow’s Elements of Modern X-ray Physics is a defining moment in the field of synchrotron radiation… a welcome addition to the bookshelves of synchrotron–radiation professionals and students alike.... The text is now my personal choice for teaching x-ray physics…” – Physics Today, 2002
Topics covered include:
An overview and history of flexible electronics
Novel materials for solution-processable thin-film electronic devices and their properties
Low-temperature processing of conventional materials and devices on plastic foils
Novel techniques, such as printing and roll-to-roll processing, for large-area flexible electronics manufacturing
Materials and device physics relevant to flexible electronics
Device integration on flexible substrates
Mechanical and electronic characteristics for thin-film transistors and nano-scale transparent conductors on flexible platforms
Applications towards flexible displays, sensors, actuators, solar energy, radio-frequency identification, and micro-electro-mechanical systems
Written by leading researchers in the field, Flexible Electronics: Materials and Applications serves as a reference for researchers, engineers, and students interested in the characteristics, capabilities, and limitations of these exciting materials and emerging applications.
The book provides a basis for the understanding of modern semiconductor devices that havedimensions in the nanometer range, i.e. comparable to the electron de Broglie wavelength. Classical and semi-classical physics no longer gives a full description of a number of physicalprocesses. The inclusion of quantum mechanical principles becomes mandatory and provides a useful description of many physical processes in electronic, optoelectronic, and photonic heterostructure devices.
The first part of the book (Chapters 1 – 11) teaches quantum-mechanical principles, including the postulates of quantum mechanics, operators, the uncertainty principle, the Schrödinger equation, non-periodic and periodic potentials, quantum wells, and perturbation theory. The second part of the book (Chapters 12 – 20) applies these principles to semiconductor devices and discusses the density of states, semiconductor statistics, carrier concentrations, doping, tunneling, and some aspects of heterostructure devices.
The book may be of particular interest to individuals working in the fields of microelectronics, optoelectronics, and photonics with an educational background in Electrical Engineering, Applied Physics, or Materials Science.
Readership: Undergraduates, physicists, electronic engineers, biologists and life-scientists interested in basic computational nano-engineering.
“Nano-Engineering in Science and Technology demonstrates that when it comes to atomic-scale design, no job is too small.”Library of Science
The content and coverage of the book benefit from the extensive experience of the two authors who have made significant contributions as researchers as well as in teaching physics students in various universities.Contents:Interactions of Charged Particles and PhotonsPhysics and Properties of Silicon SemiconductorTransport Phenomena in SemiconductorsProperties of the p-n Junctions of Silicon Radiation DevicesCharged Particle DetectorsPhoton Detectors and Dosimetric DevicesExamples of Applications of Silicon Devices in Physics and Medical PhysicsAppendix A: General Properties and Physical Constants
Readership: Graduate students, researchers and professionals involved in space research and medical researchers using silicon based radiation detectors.
Keywords:Interactions of Charged Particles and Photons with Matter;Physics and Properties of Semiconductors;Charge Transport in Semiconductors;Application of Silicon in Charged Particle Detectors;Microstrip;Pixel Silicon Detectors;Photon Detectors and Doismetris Devices;Application of Silicon in Physics Experiments (Including Space) and Medical PhysicsKey Features:A detailed presentation of the fundamental principles of interaction between radiation and matter, combined with the principles of working and operation of particle detectors based on silicon solid state devicesComplete coverage of applications in physics experiments from low to high energy, space physics and medical fields, including imaging applicationsDetailed presentation and explanations for all topics treated in the book benefitting from the large experience of the two authorsSeveral topics are clearly unique at this time such as the section on pixel detectors
This book is composed of seven chapters, and begins with an introduction to the general concepts of time dependent flow, including induced current, the techniques of linearization, calculating variational transit time, and obtaining equivalent circuits. The following chapters present the classical linear analysis, which includes the space-charge effects, with several applications. These chapters also explore the existence of a maximum stable current in a space-charge limited diode. The discussion then shifts to the basics of high velocity, klystron, gap with nonuniform field distributions, and the application of the multicavity klystron. This text further covers the analysis and examples of crossed-field gaps. The final chapters deal with the fundamentals of velocity and current distributions obtained from common electron emitters, with some attempt to show how the multivelocity streams evolve into single-velocity equivalents needed for the methods of earlier chapters. Results of applying the Lagrangian starting analysis to semiconductor diode regions, necessarily from a new equation of motion, are also provided.
This book is intended for graduate courses, seminars, and research studies.
Starting with the chemical fundamentals of the chalcogens and their major compounds, the initial part of the book includes a systematic description of the MCh solids on the basis of the Periodic Table in terms of their structures and key properties. This is followed by a general discussion on the electrochemistry of chalcogen species, and the principles underlying the electrochemical formation of inorganic compounds/alloys. The core of the book offers an insight into available experimental results and inferences regarding the electrochemical preparation and microstructural control of conventional and novel MCh structures. It also aims to survey their photoelectrochemistry, both from a material-oriented point of view and as connected to specific processes such as photocatalysis and solar energy conversion.
Finally, the book illustrates the relevance of MCh materials to various applications of electrochemical interest such as (electro)catalysis in fuel cells, energy storage with intercalation electrodes, and ion sensing.
Starting with a brief refresher to get all readers on an equal footing, the text moves on to a broad selection of advanced topics, backed by problems with solutions for use in classrooms as well as for self-study.
Written by authors with research and teaching backgrounds from eminent institutions and based on a tried-and-tested lecture, this is a must-have for researchers, research students and instructors involved with semiconductor junctions, nanostructures and thin film systems.
This book is written for use as a text or reference by researchers, engineers, professors, and students engaged in the research, development, study, and manufacture of permanent magnets and electromechanical devices. It can serve as a primary or supplemental text for upper level courses in electrical engineering on electromagnetic theory, electronic and magnetic materials, and electromagnetic engineering.
traditionally taught in solid state courses. This book fills that gap. The style is tutorial, simple, and completely self-contained.
Solid State Physicsexplains to readers the newest advances in the area of condensed matter physics with rigorous, but lucid mathematics. Examples are an integral part of the text, and they are carefully designed to apply the fundamental principles illustrated in the text to currently active topics of research.Bridges the gap between fundamental principles and active fields of reserch, including explanations of all the latest advancesProvides an in-depth treatment of current research topicsExamples are integral to the text and apply fundamental principles to current topics of researchBoth authors have many years of experience of teaching at a variety of levels--undergraduate, post-graduate, tutorial workshops and seminars
The book begins with a brief introduction to binary rare earth oxides, their physical and chemical stabilities, polymorphism, crystal structures and phase transformation and the association with current applications. The book goes on to present the band structure of the oxides using several quantum chemical calculations, which belong to a newly developed area in the binary rare earth oxides. Central to this chapter are the characterizations of electrical, magnetic and optical properties, as well as details of single crystal growth and particle preparation methods that have progressed in recent years. Later chapters concentrate on thermo-chemical properties and trace determination techniques. The final chapter contains a variety of useful applications in various fields such as phosphors, glass abrasives, automotive catalysts, fuel cells, solid electrolytes, sunscreens, iron steels, and biological materials.
This book is an invaluable resource for materials scientists and solid-state physicists and chemists with an interest in rare earth oxides, as well as advanced students and graduates who require an approach to familiarize them with this field. This book provides guidance through a comprehensive review of all the characteristics of binary rare earth oxides.
As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.
A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:
Vacancies, interstitials, and impurities (especially hydrogen)
Negative bias temperature instabilities
Defects in ultrathin oxides (SiO2 and silicon oxynitride)
Take A Proactive Approach
The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si02 as the preferred gate dielectric material, and high-mobility substrates.
The book covers electrical transport properties in carbon based materials by dealing with statistical mechanics of carbon nanotubes and graphene - presenting many fresh and sometimes provoking views. Both second quantization and superconductivity are covered and discussed thoroughly. An extensive list of references is given in the end of each chapter, while derivations and proofs of specific equations are discussed in the appendix.
The experienced authors have studied the electrical transport in carbon nanotubes and graphene for several years, and have contributed relevantly to the understanding and further development of the field. The content is based on the material taught by one of the authors, Prof Fujita, for courses in quantum theory of solids and quantum statistical mechanics at the University at Buffalo, and some topics have also been taught by Prof. Suzuki in a course on advanced condensed matter physics at the Tokyo University of Science.
For graduate students in physics, chemistry, electrical engineering and material sciences, with a knowledge of dynamics, quantum mechanics, electromagnetism and solid-state physics at the senior undergraduate level. Includes a large numbers of exercise-type problems.
The conventional notion of the crystal field potential is narrowed to its non-spherical part only through ignoring the dominating spherical part which produces only a uniform energy shift of gravity centres of the free ion terms. It is well understood that the non-spherical part of the effective potential "seen" by open-shell electrons localized on a metal ion plays an essential role in most observed properties. Light adsorption, electron paramagnetic resonance, inelastic neutron scattering and basic characteristics derived from magnetic and thermal measurements, are only examples of a much wider class of experimental results dependent on it. The influence is discerned in all kinds of materials containing unpaired localized electrons: ionic crystals, semiconductors and metallic compounds including materials as intriguing as high-Tc superconductors, or heavy fermion systems. It is evident from the above that we deal with a widespread effect relative to all free ion terms except those which can stand the lowered symmetry, e.g. S-terms.
Despite the universality of the phenomenon, the available handbooks on solid state physics pay only marginal attention to it, merely making mention of its occurrence. Present understanding of the origins of the crystal field potential differs essentially from the pioneering electrostatic picture postulated in the twenties. The considerable development of the theory that has been put forward since then can be traced in many regular articles scattered throughout the literature. The last two decades have left their impression as well but, to the authors' best knowledge, this period has not been closed with a more extended review. This has also motivated us to compile the main achievements in the field in the form of a book.
This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.