Feng Pan received his BS degree in EECS from The University of California, Berkeley, and MS in Electrical Engineering from Stanford University. He is a Stanford Certified Program Manager (SCPM), and is currently working as a director of NSG at Micron Technology, Inc., on 3D VNAND technology. Mr. Pan previously held various senior management and leadership positions at SanDisk and AMD. Mr. Pan is coauthor of Charge Pump Circuit Design, and has 51 granted patents related to power management, LDO, charge pump architectures, charge pump regulations and applications, ADC design, op-amp designs, and NAND/NOR flash memory designs.