Defects in PN Junctions and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance Measurements, Videotape Script

Microelectronic test pattern NBS-3 for evaluating the resistivity-dopaut density relationship of silicon: Issues 400-422

Defects in PN Junctions and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance Measurements: Videotape Script, Volume 13

Microelectronic Test Pattern NBS-3 for Evaluating the Resistivity-dopant Density Relationship of Silicon: Volume 13

Microelectronic Test Pattern NBS-3 for Evaluating the Resistivity-dopant Density Relationship of Silicon: Volume 13

Microelectronic Test Patterns: An Overview, Volume 13

Planar Test Structures for Characterizing Impurities in Silicon: Volume 13

Microelectronic Test Patterns: An Overview, Volume 13

Defects in PN Junctions and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance Measurements, Videotape Script

Microelectronic Test Pattern NBS-4: Volume 13

Microelectronic Test Pattern NBS-4: Volume 13

A Wafer Chuck for Use Between -196 and 350°C: Issue 55; Issue 400

A BASIC Program for Calculating Dopant Density Profiles from Capacitance-voltage Data: Volume 13

A Wafer Chuck for Use Between -196 and 3500C

A Wafer Chuck for Use Between -196 and 350C̊

A BASIC Program for Calculating Dopant Density Profiles from Capacitance-voltage Data: Volume 13

Microelectronic Test Pattern NBS-4: Volume 13