Lecture Notes in Nanoscale Science and Technology

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Latest release: August 10, 2023
Series
30
Books
Physical Properties of Ceramic and Carbon Nanoscale Structures: The INFN Lectures, Vol. II
Book 11·Feb 2011
3.0
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This is the second volume in a series of books on selected topics in Nanoscale Science and Technology based on lectures given at the well-known INFN schools of the same name. The aim of this collection is to provide a reference corpus of suitable, introductory material to relevant subfields, as they mature over time, by gathering the significantly expanded and edited versions of tutorial lectures, given over the years by internationally known experts. The present set of notes stems in particular from the participation and dedication of prestigious lecturers, such as Andrzej Huczko, Nicola Pugno, Alexander Malesevic, Pasquale Onorato and Stefano Bellucci. All lectures were subsequently carefully edited and reworked, taking into account the extensive follow-up discussions. A tutorial lecture by Huczko et al. shows how a variety of carbon and ceramic nanostructures (nanotubes, nanowires, nanofibres, nanorods, and nanoencapsulates) have in particular great potential for improving our understanding of the fundamental concepts of the roles of both dimensionality and size on physical material properties . Bellucci and Onorato provide an extensive and tutorial review of the (quantum) transport properties in carbon nanotubes, encompassing a description of the electronic structure from graphene to single-wall nanotubes, as well as a discussion of experimental evidence of superconductivity in carbon nanotubes and the corresponding theoretical interpretation. In the first contribution by Pugno, new ideas on how to design futuristic self-cleaning, super-adhesive and releasable hierarchical smart materials are presented. He also reviews the mechanical strength of such nanotubes and megacables, with an eye to the visionary project of a carbon nanotube-based ‘space elevator megacable’. In his second contribution, Pugno outlines in detail the role on the fracture strength of thermodynamically unavoidable atomistic defects with different size and shape, both numerically and theoretically, for nanotubes and nanotube bundles. Focusing on graphitic allotropes, the chapter by Bellucci and Malesevic aims to give a taste of the widespread implications carbon nanostructures have on research and applications, starting from an historical overview, followed by a discussion of the structure and physical properties of carbon nanotubes and graphene, in particular in the context of the several different synthesis techniques presently available.
Self-Assembly of Nanostructures: The INFN Lectures, Vol. III
Book 12·Oct 2011
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This is the third volume in a series of books on selected topics in Nanoscale Science and Technology based on lectures given at the well-known Istituto Nazionale di Fisica Nucleare (INFN) schools of the same name. The present set of notes stems in particular from the participation and dedication of prestigious lecturers, such as Nunzio Motta, Fulvia Patella, Alexandr Toropov, and Anna Sgarlata. All lectures have been carefully edited and reworked, taking into account extensive follow-up discussions.

A tutorial lecture by Motta et al. presents the analysis of the Poly(3-hexylthiophene) self assembly on carbon nanotubes and discusses how the interaction between the two materials forms a new hybrid nanostructure, with potential application to future solar cells technology. In their contribution, Patella et al. review quantum dots of III-V compounds, which offer appealing perspectives for more sophisticated applications in new generation devices such as single-photon emitters for nano-photonics and quantum computing. Focusing on self-assembled quantum dots, the chapter by Alexandr Toropov et al. provides a comprehensive review of some important aspects in the formation of quantum dots and presents the results of the authors’ extensive investigation of the features of droplet epitaxy. The fourth contribution, by Sgarlata et al., focuses on recent progress toward controlled growth of self-assembled nanostructures, dealing with the shaping, ordering and localization in Ge/Si heteroepitaxy and reviewing recent results on the self-organization of Ge nanostructures at Si surfaces.
Toward Quantum FinFET
Book 17·Nov 2013
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This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.
  • Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect
  • Provides the keys to understanding the emerging area of the quantum FinFET
  • Written by leading experts in each research area
  • Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
Graphene for Transparent Conductors: Synthesis, Properties and Applications
Book 23·Jul 2015
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This book provides a systematic presentation of the principles and practices behind the synthesis and functionalization of graphene and grapheme oxide (GO), as well as the fabrication techniques for transparent conductors from these materials.

Transparent conductors are used in a wide variety of photoelectronic and photovoltaic devices, such as liquid crystal displays (LCDs), solar cells, optical communication devices, and solid-state lighting. Thin films made from indium tin oxide (ITO) have thus far been the dominant source of transparent conductors, and now account for 50% of indium consumption. However, the price of Indium has increased 1000% in the last 10 years. Graphene, a two-dimensional monolayer of sp2-bonded carbon atoms, has attracted significant interest because of its unique transport properties. Because of their high optical transmittance and electrical conductivity, thin film electrodes made from graphene nanosheets have been considered an ideal candidate to replace expensive ITO films.

Graphene for Transparent Conductors offers a systematic presentation of the principles, theories and technical practices behind the structure–property relationship of the thin films, which are the key to the successful development of high-performance transparent conductors. At the same time, the unique perspectives provided in the applications of graphene and GO as transparent conductors will serve as a general guide to the design and fabrication of thin film materials for specific applications.