Effect of Growth Rate on the Structure and Stacking Disorder of SiC Crystals Grown by the Lely Method

Yoshizō Inomata

1969年1月 · Air Force Cambridge Research Laboratories, Office of Aerospace Research, United States Air Force

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The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator.