මෙම ඉ-පොත ගැන
- Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling
- Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties
- Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches
- Describes the latest developments in carbon nanotubes, iii-v devices structures, and more
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
ඇගයීම් සහ සමාලෝචන
කර්තෘ පිළිබඳ
Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.
