Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Farzan Jazaeri · Jean-Michel Sallese

2018. g. marts · Cambridge University Press

Par šo e-grāmatu

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

Par autoru

Farzan Jazaeri is a Scientist at the Ecole Polytechnique Fédérale de Lausanne where his research interests focus on semiconductor devices and physics, and particularly the modeling and fabrication of field-effect transistors.

Jean-Michel Sallese is a Senior Scientist at the Ecole Polytechnique Fédérale de Lausanne. He specialises in the analytical modeling of bulk and multigate field-effect transistors.