關於這本電子書
This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva tion of interface or boundary conditions for semiconductor device simula tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.
評分和評論
4.3
3 則評論
為這本電子書評分
請分享你的寶貴意見。
閱讀資訊
智能手機和平板電腦
手提電腦和電腦
你可以使用電腦的網絡瀏覽器聆聽在 Google Play 上購買的有聲書。
電子書閱讀器及其他裝置
如要在 Kobo 等電子墨水裝置上閱覽書籍，你需要下載檔案並傳輸到你的裝置。請按照說明中心的詳細指示，將檔案傳輸到支援的電子書閱讀器。
