Light-Emitting Diodes: Edition 2

E. Fred Schubert

มิ.ย. 2006 · Cambridge University Press

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Revised and fully updated, the second edition of this graduate textbook offers a comprehensive explanation of the technology and physics of LEDs such as infrared, visible-spectrum, ultraviolet, and white LEDs made from III-V semiconductors. Elementary properties such as electrical and optical characteristics are reviewed, followed by the analysis of advanced device structures. With nine additional chapters, the treatment of LEDs has been vastly expanded, including new material on device packaging, reflectors, UV LEDs, III-V nitride materials, solid-state sources for illumination applications, and junction temperature. Radiative and non-radiative recombination dynamics, methods for improving light extraction, high-efficiency and high-power device designs, white-light emitters with wavelength-converting phosphor materials, optical reflectors, and spontaneous recombination in resonant-cavity structures are discussed in detail. With exercises, solutions, and illustrative examples, this textbook will be of interest to scientists and engineers working on LEDs and graduate students in electrical engineering, applied physics, and materials science.

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E. F. Schubert received his PhD degree with honors in Electrical Engineering from University of Stuttgart in 1986 and is currently a Wellfleet Senior Constellation Professor at Rensselaer Polytechnic Institute. He has made several pioneering contributions to the field of LEDs including the first demonstration of the resonant-cavity light-emitting diode (RCLED). He has authored or co-authored more than 200 publications including Doping in III-V Semiconductors (Cambridge, 1993) for which he was awarded the VDE Literature Prize. He is inventor or co-inventor of 28 US Patents and a Fellow of the IEEE, APS, OSA, and SPIE. He received the Senior Research Award of the Humboldt Foundation, the Discover Award for Technological Innovation, the RD 100 Award, and Boston University's Provost Innovation Fund Award.